US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Fill structures with air gaps" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,199, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fill structures with air gaps" was invented by Hsiu-Yung Lin (New Taipei, Taiwan), Yen Chuang (Taipei, Taiwan) and Min-Hao Hong (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure di...