US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Embedded ferroelectric memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,429, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded ferroelectric memory cell" was invented by Tzu-Yu Chen (Kaohsiung, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan), Wen-Ting Chu (Kaohsiung, Taiwan) and Yong-Shiuan Tsair (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip structure. The integrated chip structure includes a first source/drain region and a second source/drain region disposed within a substrate. A select gate is over the substrate between the first source/drain region and the second source/drain region. A ferroelectric ra...