ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,182, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Connector via structures for nanostructures and methods of forming the same" was invented by Li-Zhen Yu (New Taipei, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. Recess cavities are formed to expose a first active...