US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Bipolar junction transistor with gate over terminals" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,210, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bipolar junction transistor with gate over terminals" was invented by Ming-Shuan Li (Zhudong Township, Taiwan), Zi-Ang Su (Longtan Township, Taiwan) and Ying-Keung Leung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a first set of fins having an emitter of a bipolar junction transistor (BJT) disposed over the first set of fins, a second set of fins having a base of the BJT disposed over the second set of fins, and a third set of fins having a collector of the BJT disposed over the third set of fins. A first gate...