US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,254, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same" was invented by Feng-Chien Hsieh (Pingtung, Taiwan), Chia-Yen Hsu (Hsinchu, Taiwan), Yun-Wei Cheng (Taipei, Taiwan), Wei-Li Hu (Tainan, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan) and Hsin-Chi Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. ...