US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Titanium-containing diffusion barrier for CMP removal rate enhancement and contamination reduction" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,600, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Titanium-containing diffusion barrier for CMP removal rate enhancement and contamination reduction" was invented by Shih-Kang Fu (Hsinchu, Taiwan), Ming-Han Lee (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a dielectric layer over a substrate and a contact structure embedded in the dielectric layer. The contact structure includes a diffusion barrier contacting the dielectric layer, the diffusion barrier including a titanium (...