US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Protective liner layers in 3D memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,539, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Protective liner layers in 3D memory structure" was invented by Tsu Ching Yang (Taipei, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan), Yu-Wei Jiang (Hsinchu, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Chen-Jun Wu (Hsinchu, Taiwan), Feng-Cheng Yang (Zhudong Township, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stack of gate electrode layers and interconnect layers arranged over a substrate. A first memory cell that is arranged over the substrate...