US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Non-volatile memory (NVM) cell structure to increase reliability" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,538, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Non-volatile memory (NVM) cell structure to increase reliability" was invented by Shih-Hsien Chen (Zhubei, Taiwan), Chun-Yao Ko (Hsinchu, Taiwan) and Felix Ying-Kit Tsui (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first well region disposed within a substrate and comprising a first doping type. A conductive structure overlies the first well region. A pair of first doped regions is disposed within the first well region on opposing sides of the conductive structure. The pair of first doped r...