US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 24 for "Method of manufacturing semiconductor devices and semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,055, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices and semiconductor devices" was invented by Jun-Nan Nian (Hsinchu, Taiwan), Yao-Hsiang Liang (Hsinchu, Taiwan), Ming-Ching Chung (Tainan, Taiwan), Hsueh-Han Lu (Tainan, Taiwan) and Chun-Ju Wu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, a control layer disposed over the first ILD layer and containing silicon and oxygen, and a resistor wire disposed over the control layer. An oxygen ...