US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 24 for "Method of manufacturing semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,610, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor device" was invented by Harry Hak-Lay Chuang (Hsinchu, Taiwan) and Wei Cheng Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming first gate structure and a second gate structure over a core device region of a substrate. The method further includes forming stressors at opposite sides of the first gate structure. The method further includes doping the stressors to form a first source region and a first drain region of a first devi...