ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,060, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method for manufacturing through vias using amorphization to adjust etching rate" was invented by Ching Kang Chen (Kaohsiung, Taiwan), Kun-Ei Chen (Tainan County, Taiwan), Chen-Chieh Chiang (Kaohsiung, Taiwan) and Ling-Sung Wang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure is provided. The method may include several operations. A first layer is formed over a first region and a second region of a substrate. A first etching is performed on the first layer, thereby forming a f...