ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,011, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for forming and using mask" was invented by Ching-Yu Chang (Taipei, Taiwan), Jei Ming Chen (Tainan, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A target layer is patterned using the patterned mask layer as a...