US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Method for forming a semiconductor structure by diffusing manganese from a seed layer to a barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,101, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming a semiconductor structure by diffusing manganese from a seed layer to a barrier layer" was invented by Cai-Ling Wu (Hsinchu, Taiwan), Hsiu-Wen Hsueh (Taichung, Taiwan), Chii-Ping Chen (Hsinchu, Taiwan), Po-Hsiang Huang (Taipei, Taiwan) and Chi-Feng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes removing a portion of a dielectric layer to form a trench in the dielectric layer. The method includes forming a barrier layer in ...