ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,839, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device and system" was invented by Yu-Der Chih (Hsinchu, Taiwan), Yun-Sheng Chen (Hsinchu County, Taiwan), Jonathan Tsung-Yung Chang (Hsinchu, Taiwan), Hsin-Yuan Yu (Hsinchu County, Taiwan), Chrong Jung Lin (Hsinchu, Taiwan) and Ya-Chin King (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first active area, a first doped structure of a first doping type, a second active area, a first gate structure and a second doped structure of a second doping type different from the first doping type. The sec...