US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Memory device and manufacturing method thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,548, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Chien-Min Lee (Hsinchu County, Taiwan), Cheng-Hsien Wu (Hsinchu, Taiwan), Cheng-Chun Chang (Taoyuan, Taiwan), Elia Ambrosi (Hsinchu, Taiwan), Hengyuan Lee (Hsinchu, Taiwan), Ying-Yu Chen (Yilan, Taiwan), Xinyu Bao (Fremont, Calif.) and Tung-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ovonic threshold switch (OTS) selector and a memory device including the OTS selector is provided. The OTS selector includes a switching layer formed of a GeCTe compound fu...