US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 24 for "Memory cell array circuit and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,160, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory cell array circuit and method of forming the same" was invented by Chi-Hsiang Weng (Hsinchu, Taiwan) and Yu-Der Chih (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell array includes a first and a second column of memory cells, a first and a second bit line, a source line and a first set of vias. The second bit line includes a first conductive line located on a first metal layer, and a second conductive line located on a second metal layer. The first and second conductive lines overlap a source of a transistor...