US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 24 for "Magnetoresistive random-access memory (MRAM) structure for improving process control and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,727, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetoresistive random-access memory (MRAM) structure for improving process control and method of fabricating thereof" was invented by Hsiang-Lun Kao (Taoyuan County, Taiwan), Chen-Chiu Huang (Taichung, Taiwan), Chien-Hua Huang (Miaoli County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary method includes forming a multilayer interlevel dielectric (ILD) layer having a metal-containing dielectric layer (e.g., an aluminum oxide layer) between a first dielectric layer and a second dielectric ...