US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Magnetic tunnel junction structures with protection outer layers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,730, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic tunnel junction structures with protection outer layers" was invented by Sheng-Chang Chen (Hsinchu, Taiwan), Harry-Hak-Lay Chuang (Hsinchu, Taiwan), Hung Cho Wang (Hsinchu, Taiwan) and Sheng-Huang Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation the same. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. Tw...