ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,613, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Low leakage device" was invented by Cheng-Ting Chung (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a first plurality of gate-all-around (GAA) devices in a first device area and a second plurality of GAA devices in a second device area. Each of the first plurality of GAA devices includes a first vertical stack of channel members extending along a first direction, and a first gate structure over...