US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Integrated circuit with nanostructure transistors and bottom dielectric insulators" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,587, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with nanostructure transistors and bottom dielectric insulators" was invented by Zhi-Chang Lin (Hsinchu, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Shih-Cheng Chen (Hsinchu, Taiwan), Jung-Hung Chang (Hsinchu, Taiwan), Tsung-Han Chuang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain reg...