US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 24 for "Forming metal contacts on metal gates" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,598, issued on June 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Forming metal contacts on metal gates" was invented by Chao-Hsun Wang (Taoyuan County, Taiwan), Yu-Feng Yin (Hsinchu County, Taiwan), Kuo-Yi Chao (Hsinchu, Taiwan), Mei-Yun Wang (Hsin-Chu, Taiwan), Feng-Yu Chang (Kaohsiung, Taiwan) and Chen-Yuan Kao (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a metal gate structure having a gate dielectric layer and a gate electrode. A topmost surface of the gate dielectric layer is above a topmost surface of the gate electrode. The semiconductor struct...