US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Fin isolation structures of semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,604, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin isolation structures of semiconductor devices" was invented by Kuo-Cheng Chiang (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a fin field effect transistor (finFET) on a substrate includes forming a fin structure on the substrate and forming a shallow trench isolation (STI) region on the substrate. First and second fin portions of the fin structure extend above a top surface of the ...