US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Drive circuit with improved timing margin for memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,838, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Drive circuit with improved timing margin for memory device" was invented by Masaru Haraguchi (Hsinchu, Taiwan), Yoshisato Yokoyama (Hsinchu, Taiwan) and Yorinobu Fujino (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are related to a memory device. In one aspect, the memory device includes a drive circuit coupled to a first line and a second line. In one aspect, the drive circuit is configured to apply, according to a first control signal having a first state, a data signal to either one of the first line or the s...