US Patent Issued to Taiwan Semiconductor Manufacturing on June 24 for "Anti-oxidation layer to prevent dielectric loss from planarization process" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,019, issued on June 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Anti-oxidation layer to prevent dielectric loss from planarization process" was invented by Zhen Yu Guan (Hsinchu, Taiwan) and Hsun-Chung Kuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the c...