US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Transistor including dielectric barrier and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,240, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor including dielectric barrier and manufacturing method thereof" was invented by Shih-Cheng Chen (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu, Taiwan), Jung-Hung Chang (Hsinchu, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor on a substrate. The source/drain regions of the first nanostructure are electrically isolated from the semi...