US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Three-dimensional ferroelectric random access memory devices and methods of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,183, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional ferroelectric random access memory devices and methods of forming" was invented by Tsuching Yang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Kuo Chang Chiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan) and Yu-Wei Jiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material;...