US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Target control in extreme ultraviolet lithography systems using aberration of reflection image" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,332,571, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Target control in extreme ultraviolet lithography systems using aberration of reflection image" was invented by Ting-Ya Cheng (Taipei, Taiwan), Han-Lung Chang (Kaohsiung, Taiwan), Shi-Han Shann (Hsinchu, Taiwan), Li-Jui Chen (Hsinchu, Taiwan) and Yen-Shuo Su (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining ab...