US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Split gate memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,229, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Split gate memory device and method of fabricating the same" was invented by Chang-Ming Wu (New Taipei, Taiwan), Wei Cheng Wu (Zhubei, Taiwan), Shih-Chang Liu (Alian Township, Taiwan), Harry-Hak-Lay Chuang (Zhubei, Taiwan) and Chia-Shiung Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a source/drain region arranged within a substrate. A select gate and a memory gate are arranged over the substrate. An inter-gate dielectri...