US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Source/drain structure for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,210, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain structure for semiconductor device" was invented by Chien-Wei Lee (Kaohsiung, Taiwan), Chii-Horng Li (Zhubei, Taiwan), Heng-Wen Ting (Hsinchu, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan), Yen-Ru Lee (Hsinchu, Taiwan), Chih-Yun Chin (Taichung, Taiwan), Chih-Hung Nien (Changhua, Taiwan) and Jing-Yi Yan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substr...