US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Source/drain regions of semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,237, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain regions of semiconductor device and method of forming the same" was invented by Wei-Min Liu (Hsinchu, Taiwan), Li-Li Su (Chubei, Taiwan), Chii-Horng Li (Zhubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first nanostructure over a semiconductor substrate; a second nanostructure over the first nanostructure; a gate structure surrounding the first nanostructure and the second nanostructure; a first epitaxial region in the semiconductor substrate adjacent the gate structur...