US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor structure with metal ion capture layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,256, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with metal ion capture layer" was invented by Yi Ting Liao (Changhua, Taiwan), Chao-Chi Chen (Tainan, Taiwan), Bo-Wei Chen (Kaohsiung, Taiwan), Shi Sheng Hu (Tainan, Taiwan) and Shun Chi Tsai (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure with a metal ion capture layer and a method for forming the structure. The method includes forming a first fin structure and a second fin structure on a substrate and forming a first gate structure over the first fi...