US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor structure and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,395, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Hsiang-Wei Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a gate structure over a substrate. The structure also includes a source/drain epitaxial structure formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the gate structure. The structure also includes a metal layer formed over the contact structure. The structure also includes a cap layer formed over the meta...