US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor devices having ferroelectric tunnel junction structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,186, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices having ferroelectric tunnel junction structure" was invented by Ying-Chih Chen (Hsinchu County, Taiwan) and Blanka Magyari-Kope (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disp...