US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Semiconductor devices and methods for increased capacitance" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,199, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices and methods for increased capacitance" was invented by Cheng-You Tai (Taipei, Taiwan), Ling-Sung Wang (Tainan, Taiwan), Ru-Shang Hsiao (Jhubei, Taiwan), Jung-Chi Jeng (Tainan, Taiwan), Sung-Hsin Yang (Tainan, Taiwan) and Tsung Jing Wu (Yunlin County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed. Grooves are formed across a width of the fin(s) to increase the overlapping surface area with the gate t...