US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,272, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Chun-Hung Huang (Hsinchu, Taiwan), Hsin-Che Chiang (Taipei, Taiwan) and Jeng-Ya Yeh (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device structure is provided. The method includes forming semiconductor fins at a first conductivity type region and a second conductivity type region of a substrate, forming a sacrificial gate structure across a portion of the semiconductor fins, wherein the sacrificial gate struc...