US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Semiconductor device structure and method for forming the semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,250, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the semiconductor device structure" was invented by Shao-Jyun Wu (Hsinchu, Taiwan), Yung Feng Chang (Hsinchu, Taiwan), Tung-Heng Hsieh (Hsinchu, Taiwan) and Bao-Ru Young (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming a fin structure with alternating stacked first semiconductor layers and second semiconductor layers over a substrate. The method also includes forming a cladding layer over the fin structure...