ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,215, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device structure and method for forming the same" was invented by Lin-Yu Huang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Huan-Chieh Su (Tianzhong Township, Changhua County, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over th...