US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor device isolation features" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,236, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device isolation features" was invented by Yu-Lien Huang (Jhubei, Taiwan), Guan-Ren Wang (Hsinchu, Taiwan) and Ching-Feng Fu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a secon...