US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Semiconductor device including source/drain contact having height below gate stack" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,296, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device including source/drain contact having height below gate stack" was invented by Charles Chew-Yuen Young (Cupertino, Calif.), Chih-Liang Chen (Hsinchu, Taiwan), Chih-Ming Lai (Hsinchu, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan), Shun-Li Chen (Tainan, Taiwan), Kam-Tou Sio (Hsinchu County, Taiwan), Shih-Wei Peng (Hsinchu, Taiwan), Chun-Kuang Chen (Hsinchu County, Taiwan) and Ru-Gun Liu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided and includes a first gate structure, ...