US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,235, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same" was invented by Szu-Hua Chen (Tainan, Taiwan), Cheng-Ming Lin (Kaohsiung, Taiwan), Han-Yu Lin (Nantou County, Taiwan), Wei-Yen Woon (Taoyuan, Taiwan), Ming-Jie Huang (Hsinchu, Taiwan), Ting-Gang Chen (Taipei, Taiwan), Tai-Chun Huang (Hsin-Chu, Taiwan), Ming-Chang Wen (Kaohsiung, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a low-k isolation structure and a metho...