US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor device having different source/drain junction depths and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,282, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having different source/drain junction depths and fabrication method thereof" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Chun-Jun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and formation methods of a semiconductor device are provided. The method includes forming a first dummy gate structure across a first fin in a first transistor region of a semiconductor substrate and a second dummy gate structu...