US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Semiconductor device and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,350, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Meng-Yu Lin (New Taipei, Taiwan), Chun-Fu Cheng (Hsinchu County, Taiwan), Cheng-Yin Wang (Taipei, Taiwan), Yi-Bo Liao (Hsinchu, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over t...