US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Semiconductor device and manufacturing method thereof" (Taiwanese, Malaysian Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,269, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Peng-Soon Lim (Johor, Malaysia) and Zi-Wei Fang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a first gate structure over the substrate, a second gate structure over the substrate, first gate spacers, second gate spacers, first and second metal layers spanning over the first and second gate structures, first and second contact plugs extending through the first and second metal layers, respective...