ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,390, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Da-Yuan Lee (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first gate structure, and a second gate structure. The first gate structure is disposed on the substrate. The first gate structure includes a first capping layer and a first underlying layer below the first capping layer. The second gate structure is disposed on the substrate. The second gate structure includes a s...