ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,317, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Remote plasma ultraviolet enhanced deposition" was invented by Hai-Dang Trinh (Hsinchu, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan) and Fa-Shen Jiang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the process...