US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Non-conformal gate oxide formation on FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,248, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Non-conformal gate oxide formation on FinFET" was invented by Tsung-Ju Chen (Hsinchu, Taiwan), Shu-Han Chen (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate oxide on a wafer, and the dummy gate oxide is formed on a sidewall and a top surface of a protruding semiconductor fin in the wafer. The formation of the dummy gate oxide may include a Plasma Enhanced Chemical Vapor Deposition (PECVD) process in a deposition chamber, and th...