US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Multi-gate semiconductor device and method for forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,213, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate semiconductor device and method for forming the same" was invented by I-Sheng Chen (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan), Cheng-Hsien Wu (Hsinchu, Taiwan), Ling-Yen Yeh (Hsinchu, Taiwan) and Carlos H. Diaz (Los Altos Hills, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-gate semiconductor device includes a plurality of nanostructures vertically stacked over a substrate, a gate dielectric layer wrapping around the plurality of nanostructures, a gate conductive structure over the gate dielectric layer, and...