US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "MRAM stacks, MRAM devices and methods of forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,238, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MRAM stacks, MRAM devices and methods of forming the same" was invented by Shy-Jay Lin (Hsinchu County, Taiwan), Wilman Tsai (Saratoga, Calif.) and Ming-Yuan Song (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the ...