US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Mobility enhancement by source and drain stress layer or implantation in thin film transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,187, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Mobility enhancement by source and drain stress layer or implantation in thin film transistors" was invented by Hui-Hsien Wei (Taoyuan, Taiwan), Yen-Chung Ho (Hsinchu, Taiwan), Chia-Jung Yu (Hsinchu, Taiwan), Yong-Jie Wu (Hsinchu, Taiwan) and Pin-Cheng Hsu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A planar insulating spacer layer can be formed over a substrate, and a combination of a semiconducting material layer, a thin film transistor (TFT) gate dielectric layer, and a gate electrode can be formed over the planar insulating ...