US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Methods of forming gate structures with uniform gate length" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,266, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming gate structures with uniform gate length" was invented by Shahaji B. More (Hsinchu, Taiwan), Cheng-Han Lee (New Taipei, Taiwan) and Shih-Chieh Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first gate region having a first gate length; a first spacer on a sidewall of the first gate region; a semiconductor layer over the first gate region; a second gate region over the semiconductor layer, wherein the second gate region has a second gate length equal to the first gate length; and a second...